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以超高頻增強原子層沉積法製備超薄氧化鋁光誘發微米粒子篩選生物生醫晶片之研究

為了解決2016 F48的問題，作者陳侑賢 這樣論述：

本篇論文分為兩部分，第一部分藉由超高頻（40.68 MHz）電漿增強型原子層沉積（VHF-PEALD）系統製備氧化鋁薄膜作為其鈍化層，該層薄膜厚度約14 nm。我們將針對氧化鋁薄膜鈍化層進行分析與探討其射頻功率及沉積溫度等關係。該量測之薄膜特性包含沉積速率、薄膜折射率、表面形貌、表面疏水性、光特性及電特性等分析。第二部分則是製作氧化鋁光誘發介電泳生醫晶片，藉由前段通過超高頻電漿增強型原子層沉積系統所製備氧化鋁薄膜，延續其薄膜品質及薄膜特性，應用於光誘發介電泳生醫晶片上，分析其薄膜表面形貌、微結構、透光率、光暗電流比等分析。除此之外，我們也將針對氧化鋁是否會影響光誘發介電泳生醫晶片篩選效率及最

大移動速率進行分析與討論。藉此實驗驗證，超高頻電漿增強型原子層沉積系統所製備氧化鋁薄膜能有效提升光誘發介電泳生醫晶片篩選效率及最大移動速率。

先進奈米電晶體中鐵負容和通道工程的原子層技術之研究

為了解決2016 F48的問題，作者鄭柏賢 這樣論述：

In the sub-10nm semiconductor technology nodes, the major issue is the power consumption. Due to the challenge of extreme process conditions for the nanofabrication, the variability and stability issues for continuous transistor scaling have become a hot topic. In order to keep high performance and

low power consumption, novel device schemes have been proposed, including nanowire channel stacks, the vertical transistors, negative capacitance, 2D materials, and metallic channels. All of these schemes always face the “scaling-down” problem. Atomic layer deposition (ALD) is a very promising tech

nique for precise nanofabrication because of the layer-by-layer deposition and self-limiting mechanisms. This thesis, we mainly focus on the applications of ALD on negative capacitance transistors and TiN metallic channel to deal with the power consumption issue. In addition, with the evolution of t

he precise nanofabrication in sub-10nm semiconductor technology nodes etching technology is also becoming critical. In this thesis, a novel atomic layer etching (ALE) technique is proposed and developed.In the first part of this thesis, we report the experimental observations and the theoretical inv

estigation of the inductance caused by the ferroelectric polarization switching. The time-domain non-RC response and underdamping RLC oscillation in a metal-ferroelectric-metal (MFM) structure are observed for the first time, indicating the existence of inductance in the ferroelectric layer. The fer

roelectric inductance is also confirmed by the positive imaginary part in the Nyquist impedance plot. Upon careful examination of Maxwell''s equations, we show that the polarization switching yields an “effective ferroelectric-induced electromotive force (emf)” which results in a decrease of the vol

tage drop across the ferroelectric layer. The polarity of this effective ferroelectric-induced emf opposites the polarization switching, which is similar in behavior to the Lenz’s law and so indicates that the induced emf voltage acts against the applied voltage. Therefore, the effective ferroelectr

ic-induced emf gives rise to the inductance and negative capacitance during the polarization switching. In addition, the negative capacitance is clearly manifested by the enhancement of small-signal capacitance of a paraelectric capacitor as connected in series with a ferroelectric capacitor. This s

mall-signal capacitance enhancement is attributed to the effect of negative capacitance induced by the net ferroelectric polarization switching. The observation of negative capacitance and inductance under small-signal modulation can be accounted for by ferroelectric multi-domains in the nanoscale f

erroelectric layer, which is clearly revealed by the nano-beam electron diffraction. Finally, this ferroelectric layer is introduced into the gate stack of the nanoscale junctionless transistors to examine the large-signal operation of negative capacitance. The negative-capacitance ultrathin-body Si

junctionless transistor with a subthreshold swing below 60 mV/dec operated under a large drain voltage, along with the almost hysteresis-free operation, is first demonstrated.In the second part of this thesis, room-temperature field effect and modulation of the channel resistance was achieved in th

e metallic channel transistors, in which the oxygen-doped TiN ultrathin-body channels were prepared by the atomic layer delta doping and deposition (AL3D) technique with precise control of the channel thickness and electron concentration. The decrease of channel thickness leads to the reduction in e

lectron concentration and the blue shift of the absorption spectrum, which can be explained by the onset of quantum confinement effect. The increase of oxygen incorporation results in the increase of interband gap energy, also giving rise to the decrease in electron concentration and the blue shift

of the absorption spectrum. Because of the significant decrease in electron concentration, the screening effect was greatly suppressed in the metallic channel. Therefore, the channel modulation by the gate electric field was achieved at room temperature due to the quantum confinement and suppressed

screening effect with the thickness down to 4.8 nm and the oxygen content up to 35% in the oxygen-doped TiN ultrathin-body channel.Finally, the layer-by-layer ALE was achieved by using the combination of the ALD and HF-based wet chemical etching. The deposition of ALD oxide leads to the formation o

f the interfacial layer between the oxide and Si. Afterward, the HF-based solution removes the oxide and IL on the Si layer, resulting in the layer-by-layer, isotropic, self-limiting, self-stop, and damage-free ALE technique. The etching rate can be controlled accurately with a precision of Å scale

per ALE cycle and a high linearity between the etching depth and the applied ALE cycles.