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City, Volume 13

為了解決Seki的問題，作者Arawi, Keiichi 這樣論述：

Keiichi Arawi (1977-) is a professional comic artist and illustrator. Originally from Gunma, Japan, he was raised in the city of Maebashi. By the time he was 19 he entered the world of comics drawing short stories for Media Factory’s Comic Flapper (My Neighbor Seki, 7 Billion Needles). While his fir

st series KazeMachi was short-lived it caught the attention of one of the bigger publishers in Japan, Kadokawa Publishing. His short Nichijou won Kadokawa’s 22nd ACE Award for New Artists and by November 2006 Nichijou was regularly serialized in Kadokawa’s flagship magazine Shonen Ace. Nichijou has

since then sold more than a million copies and has seen cartoon and video game adaptations.

Seki進入發燒排行的影片

疏水性兼半導體性鎳基金屬有機框架材料微米晶體之電性研究

為了解決Seki的問題，作者林琪家 這樣論述：

本論文主要探討 [Ni2(HFDP)1(BPYM)1(4H2O)]·H2O （以下論文簡稱為 NiHB ）疏水性金屬有機框架化合物 (metal-organic framework, MOF) 微米晶體之電傳輸特性。研究中所使用的 NiHB MOF 微米晶體具有三方晶系 (Trigonal crystal system) 結構。透過接觸角量測得出其角度為 125° ，顯示極佳的疏水性。元件製作上是利用機械剝離法將 NiHB 單晶分離成微米晶體，並利用聚焦式離子束 (focused-ion beam) 技術製作微米晶體之歐姆電極。暗電導量測顯示其電導率最高可達 208 S/cm 。熱探針量測結

果顯示此 MOF 晶體為 p 型半導體。變溫暗電導量測顯示此 MOF 晶體具備半導體性的電傳導行為，並擁有極低的活化能，最低僅有 0.02 meV ，顯示電荷經由跳躍傳輸 (hopping transport) 時幾乎不需要熱能的輔助。此結果顯示 NiHB 微米晶體具備極佳的結晶品質與有序的晶格，可提供電荷在一個比較沒有阻礙的環境進行跳躍傳輸。另外，從光電導 (photoconductivity) 量測結果發現此 MOF 微米晶體具有明顯的光電流反應，隨著雷射強度增加，光電流也呈現非線性的上升趨勢。於不同波長的雷射照射下，發現 NiHB 微米晶體對紫光具有最佳的光電流反應。不同波長的條件下，

NiHB 微米晶體也都表現出不錯的反應率 (responsivity) 與光電導增益 (gain) 。藉由時間解析光電導量測發現此 MOF 晶體良好的光電導效率乃是源自於長載子活期 (carrier lifetime) 。透過環境變化光電導量測，可進一步證明此 MOF 晶體遵循表面主導之光電導機制。

資優英文文法王一本制霸

為了解決Seki的問題，作者關正生 這樣論述：

＼TOEIC激戰首重「文法」，這些祕訣你都學會了嗎？／ 傳授日本TOEIC滿分教師的智慧錦囊！！   　　想提升英文文法能力，你應該學習「將英文邏輯化」！ 　　本書用邏輯化的方式解說英文文法， 　　英文學習遇到瓶頸的中上級學習者也能吸收理解。 　　不僅如此，本書沒有落落長的繁瑣說明， 　　即使是「完全看不懂什麼是分詞構句」的人， 　　以及「不知在英文文法挫敗過多少次」的超級初學者， 　　只要將核心意象化為卡通人物， 　　結合「邏輯式解說」&「英文法角色化」 　　讓超級初學者到中‧上級人士都能瞬間吸收！一定也都能輕鬆學懂。   本書特色

  　　★日本TOEIC滿分英文講師潛心著作，一本教會你如何搞懂英文文法！ 　　★不管幾歲都可以學習的英文文法必備須知。      

GaSe奈米材料成長及其光電特性研究

為了解決Seki的問題，作者王劉霞 這樣論述：

Two topics are being the main results for the highlight in this research and those topics were divided into three parts, GaSe nanobelts (NBs) photodetector, metal-oxide-semiconductor field-effect transistor (MOSFET) properties, Ni-doped GaSe heterostructure, and GaSe nanoflakes (NBs) photodetector-

MOSFET properties. In the first work, only Ga and Se elements were involved through a simple chemical vapor deposition (CVD) without any additional chemical compounds to prevent undesired reactions that lead to the contamination of the as-grown GaSe NBs. Two devices of Ni were provided in this thesi

s as evidence of the plasmonic effect involved at 532 nm. The second device was further treated by the rapid thermal annealing (RTA) for diffusing Ni into GaSe causing the formation Ni-doped GaSe heterostructure to prove the plasmonic not occurred after the RTA treatment. As the evidence for proving

plasmonic occurred in Ni metal only, Ti was used as the electrode in GaSe NB as the further fabricated device and for comparing their performance to obtain the optoelectronic properties. The photodetection performance of the individual GaSe NB with Ni confirmed with the plasmonic effect involved al

so the comparison with Ti electrode was measured under illumination at 405 nm, 450 nm, 532 nm, and 650 nm for discovering the visible wavelength region. The figure of merits semiconductor parameters reveals the at 450 nm 3.59x104 A/W, the external quantum efficiency (EQE) about ~106 %, detectivity a

bout ~1012 Jones, and the rise/decay time within 10%-90% calculation about 40 ms/70 ms for Ni contact. Ti contact shows responsivity at 450 nm 1.70x103 A/W, EQE 105 %, detectivity ~1011 Jones, and rise/decay time within 10%-90% calculation about 20 ms/20 ms. The GaSe-NB with Ni and Ti contact were

measured with a field-effect transistor as the p-type semiconducting with mobility in dark-condition at Vd = 1 V was about 8.56 x 10-4 cm2 V-1 s-1, and 1.06 x 10-4 cm2 V-1 s-1. Additionally, the device after annealing treatment exhibits improvement photodetection performance compared to before the a

nnealing treatment. The responsivity at the same wavelength and power intensity before annealing at 450 nm were about 278.13 A/W and after annealing was about 103 A/W. Other optoelectronic properties such as EQE before annealing were about ~104 % to ~106, detectivity ~1010 Jones to 1011 Jones, and t

he rise/fall time before annealing 20 ms/200 ms to 20 ms/20 ms with the calculation 10%-90%. In the case of nanoflakes (NFs) by introducing the SnI2 and the usage of Si substrate were growth as GaSe NFs on the Si substrate. The individual NF has further fabricated metal-semiconductor junction with N

i and Ti contact and measured under illumination at 405 nm, 450 nm, 532 nm, and 650 nm as well as the FETs. At 450 nm the device Ni provides high responsivity as high as 5.78x104 A/W, EQE ~107 %, detectivity ~1012 Jones, and rise/decay time 10%-90% was about 20 ms/40 ms. Meanwhile, Ti 43.28 A/W, EQE

~104 % with detectivity ~1010 Jones and rise/decay time 10%-90% was about 39 ms/39 ms. The field-effect transistor of GaSe NF with Ni or Ti contact shows the p-type semiconducting with mobility in dark-condition at Vd = 1 V was about 4.66x10-3 cm2 V-1 s-1, and 1.79x10-3 cm2 V-1 s-1. Those metal-sem

iconductor junctions in GaSe NB and GaSe NF with the Ni and Ti contact were further measured with the temperature-dependent I-V curves to obtain the energy barrier. The comparison between Schottky Mott’s theory and Richardson based on experiment have been discovered as the confirmation toward the co

nstruction of their energy-band diagram to determine the typical type of contact with Ni or Ti contact. It reveals the applicability and benefits by obtaining the characterization such as energy barrier also offer possibilities to increase their new unexplored properties. The Schottky barrier height

becomes the crucial unexplored fundamental for revealing the operation and behavior of metal-semiconductor interfaces. The GaSe NB-Ni device Schottky barrier based on the experiment was about 0.21±0.02 eV which is close to the theoretical barrier of 0.14 eV. Meanwhile, the barrier height of GaSe NB

-Ti also provides 0.46±0.06 eV (experiment) and 0.49 eV (theoretical). In the case of GaSe NF-Ni provides the barrier height of about 0.59±0.05 eV (experiment) and 0.53 eV (theoretical). In the case of GaSe NF-Ti provides 0.78±0.03 eV (experiment) and 0.88 eV (theoretical). Finally, sufficient thick

ness between GaSe NBs was obtained within 25 min as the evidence to obtain such as the proved high-performance devices as well as in the GaSe NFs. In addition, its comparison about photodetection performance has with other previous reported works and revealing the construction of the energy band dia

gram leads to generalizing a critical role, functional electronic and optoelectronic based on the fundamental state. Thus, it can define the applicability prospect toward photodetector device application and enhance the performance based on 2D-material semiconductors in the future.