另外網站https://www.ceshigo.com/article/10383.html也說明:沒有這個頁面的資訊。
中原大學 化學工程研究所 費安東、張雍所指導 許宸華的 研究與開發用於減低聚偏二氟乙烯膜生物污染的兩性離子材料 (2021),提出XPS C1s關鍵因素是什麼,來自於雙離子共聚物、抗沾黏薄膜、PVDF薄膜。
而第二篇論文長庚大學 電子工程學系 賴朝松所指導 Mamina Sahoo的 基於石墨烯及生物碳基材料的可撓式電晶體應用與能量攫取 (2021),提出因為有 石墨烯、氟化石墨烯、太阳能电池、摩擦纳米发电机、生物碳、能量收集器的重點而找出了 XPS C1s的解答。
最後網站XPS de nanoestructuras de carbono obtenidas por descarga ...則補充:XPS of carbon nanostructures obtained by underwater arc discharge of ... Figure 2 High resolution XPS spectrum of the C1s zone from the samples of the ...
研究與開發用於減低聚偏二氟乙烯膜生物污染的兩性離子材料
為了解決XPS C1s 的問題,作者許宸華 這樣論述:
因兩性離子系統良好的抗沾黏性質,使兩性離子材料已被廣泛用於廢水、生物和醫學領域的薄膜上,本論文探討了新型抗污兩性離子的合成和表徵,以及他們在改質聚偏二氟乙烯薄膜以抵抗各種污染的用途。在第 1 章中,介紹了多年來發展起來的不同防污系統的介紹和一些最新的相關文獻; 膜分離技術; 並提供膜改性工藝。 本節也說明了本研究的目標。第 2 章介紹了通過簡單混合方法引入 2-甲基丙烯酰氧基乙基磷酰膽鹼和甲基丙烯酰氧基乙基丁基氨基甲酸酯基團 (PMBU) 對 PVDF 膜進行的簡單改質。 通過蒸汽誘導相分離(VIPS)工藝成功獲得了一套雙連續防污膜。 防污測試表明,PMBU/PVDF 膜能夠抵抗多種生物污染
物,其中細菌附著和血小板粘附分別降低到 99.9% 和 98.9%。第 3 章探討了使用衍生自商業苯乙烯馬來酸酐的兩性離子共聚物通過原位改性調節 PVDF 膜的防污性能。 該膜通過VIPS製膜程序,此製膜方式提供了高度多孔的微濾雙連續結構。 膜的物理化學分析表明,通過添加親水性兩性離子共聚物,膜的潤濕性得到改善。 這無意中導致對細菌和全血的抵抗力增加。第 4 章詳細分析了磺基甜菜鹼甲基丙烯酸酯 (SBMA) 共聚物在蒸汽滅菌過程後無法抵抗生物分子貼附的問題,並研究了建議的替代共聚物:磺基甜菜鹼甲基丙烯醯胺 (SBAA) 的特性。液相色譜和質譜分析表明 SBMA 單體 (279 g/mol) 的
蒸汽滅菌發生在酯鍵斷裂中。可以檢測到 Mw 為 211 g/mol 的物質,以及單體 MS 光譜中 279 g/mol 的原始 SBMA 物質。另一方面,SBAA 在滅菌過程後保持其完整的結構。對於共聚物的相同情況,PS-r-PEGMA-r-SBMA 在滅菌後有碎片,而 PS-r-PEGMA-r-SBAA 在檢測範圍內沒有提供共聚物碎片的證據。這些表明 PS-r-PEGMA-r-SBAA 衍生物可能是製備用於可能需要蒸汽滅菌的生物醫學相關應用的防污兩性離子膜的可行替代品。
基於石墨烯及生物碳基材料的可撓式電晶體應用與能量攫取
為了解決XPS C1s 的問題,作者Mamina Sahoo 這樣論述:
Table of ContentsAbstract.......................................................................................................iFigure Captions........................................................................................xiTable Captions...................................................
....................................xxiChapter 1: Introduction1.1 Flexible electronics................................................................................11.2 Graphene the magical material ………………………….……….......21.2.1 Synthesis of graphene…………………………….….…...21.2.1.1 Mechanical exfoliati
on of graphene………………...……21.2.1.2 Epitaxial growth on Sic substrate………………….…..31.2.1.3 Chemical vapor deposition (CVD) method………….…..41.2.2 Graphene transfer…………………………………………....41.3 Application of graphene based Electronics……………………….......51.3.1 Graphene based flexible transparent electrode
……………….61.3.2 Top gated Graphene field effect transistor…………………….71.4 Challenges of flexible graphene based field effect transistors.……….91.5 Energy harvesting devices for flexible electronics………….........….91.6 Solar cell…………………………………………………………...101.6.1 Device architecture…………………………………………101.
6.2 Issues and Challenges of Perovskite solar cells………...121.7 Triboelectric nanogenerator (TENG)………………………………121.7.1 Working mode of TENG………………………………….141.8 Applications of TENG………………………………………………151.8.1 Applications of graphene based TENG…………………....151.8.2 Applications of bio-waste material ba
sed TENG………….171.9 Key challenges of triboelectric nanogenerator…………………....…191.10 Objective and scope of this study………………………………....19Chapter 2: Flexible graphene field effect transistor with fluorinated graphene as gate dielectric2.1 Introduction………………………………………………………....212.2 Material preparation a
nd Device fabrication………………. 232.2.1CVD Growth of Graphene on Copper Foil………………….232.2.2 Transfer of graphene over PET substrate……………...........252.2.3 Fabrication of fluorinated graphene ……………...........252.2.4 F-GFETs with FG as gate dielectric device fabrication……262.2.5 Material and electrical C
haracterization …………………272.3 Results and discussion…………………………………………….282.3.1 Material characterization of PG and FG……………...…...….282.3.2 Electrical characterization of F-GFET with FG as dielectrics..332.3.3 Mechanical stability test of F-GFET with FG as dielectrics ….362.4 Summary…………………………………………………
………....40Chapter 3: Robust sandwiched fluorinated graphene for highly reliable flexible electronics3.1 Introduction………………………………………………………….423.2 Material preparation and Device fabrication ………………….........443.2.1 CVD Growth of Graphene on Copper Foil…………………...443.2.2 Graphene fluorination …...…….…………
…………..............443.2.3 F-GFETs with sandwiched FG device fabrication....................443.2.4 Material and electrical Characterization…..............................453.3 Results and discussion ……………………………………...............453.3.1 Material characterization of sandwiched…………………….453.3.2 Electric
al characterization of F-GFET with sandwiched FG....473.3.3 Mechanical stability test of F-GFET with sandwiched FG…503.3.4 Strain transfer mechanism of sandwiched FG………………513.4 Summary…………………………………………………………....53Chapter 4: Functionalized fluorinated graphene as a novel hole transporting layer for ef
ficient inverted perovskite solar cells4.1 Introduction………………………………………………………….544.2 Material preparation and Device fabrication......................................564.2.1 Materials ………………………...…………………………564.2.2 CVD-Graphene growth ……………………………...…...564.2.3 Graphene fluorination …………………………………….564.
2.4 Transfer of fluorinated graphene…………………………...574.2.5 Device fabrication …………………………………….….574.2.6 Material and electrical Characterization …….....................584.3 Results and discussion …………………………………………….594.3.1 Surface electronic and optical properties of FGr……….….594.3.2 Characterization o
f FGr and perovskite surface ……….…644.3.3 Electrical performance of PSC………………….…….…...694.3.4 Electrical performance of Flexible PSC……………………724.4 Summary…………………………………………………………...78Chapter 5: Flexible layered-graphene charge modulation for highly stable triboelectric nanogenerator5.1 Introduction…………
…………………………………………....795.2 Experimental Section……………………………………………….825.2.1 Large-area graphene growth ……………………………….825.2.2 Fabrication of Al2O3 as the CTL …………………………...825.2.3 Fabrication of a Gr-TENG with Al2O3 as the CTL………825.2.4 Material characterization and electrical measurements…….835.3 Results
and discussion.…………………………………...…………845.3.1 Material Characterization of Graphene Layers/Al2O3……845.3.2 Working Mechanism of Gr-TENG with Al2O3 as CTL…915.3.3 Electrical Characterization of Gr-TENG with Al2O3 CTL…945.3.4 Applications of the Gr-TENG with Al2O3 as CTL……….1015.4 Summary…………………………………………
……………….103Chapter 6: Eco-friendly Spent coffee ground bio-TENG for high performance flexible energy harvester6.1 Introduction…………………………………………………….......1046.2 Experimental Section…………………………………………….1086.2.1 Material Preparation …………………………………….1086.2.2 Fabrication of SCG powder based TENG………………...1086
.2.3 Fabrication of SCG thin-film based TENG ………………1096.2.4 Material characterization and electrical measurements….1106.3 Results and discussion.…………………………………...………1116.3.1 Material Characterization of SCG powder and thin film….1116.3.2 Working Mechanism of SCG-TENG……………………...1186.3.3 Electrical Cha
racterization of SCG-TENG……………….1226.3.4 Applications of the SCG thin-film based TENG………….1326.4 Summary………………………………………………………….134Chapter 7: Conclusions and future perspectives7.1 Conclusion………………………………………………………....1357.2 Future work …………………………….………………………….1377.2.1 Overview of flexible fluorinated g
raphene TENG..............1377.2.1.1 Initial results………………………………….…1387.2.2.1.1 Fabrication of FG-TENG………………1387.2.2.1.2 Working principle of FG-TENG……….1397.2.2.1.3 Electrical output of FG-TENG.………...140References…………………………………………………………….142Appendix A: List of publications………………….……………..........177A
ppendix B: Fabrication process of GFETs with fluorinated graphene (FG) as gate dielectric……........……………………………………….179Appendix C: Fabrication process of GFETs with sandwiched FG…....180Appendix D: Fabrication process of inverted perovskite solar cell with FGr as HTL…………………………………………………………….181Appendi
x E: Fabrication of a Gr-TENG with Al2O3 as the CTL…….182Appendix F: Fabrication of SCG based triboelectric nanogenerator….183Figure captionsFigure 1-1 Exfoliated graphene on SiO2/Si wafer……………………….3Figure 1-2 Epitaxial graphene growth on SiC substrate………………....3Figure 1-3 Growth mechanism of graphe
ne on Cu foil by CVD ……......4Figure 1-4 Wet transfer process of CVD grown graphene…………...….5Figure 1-5 RGO/PET based electrodes as a flexible touch screen.……....6Figure 1-6 Graphene based (a) touch panel (b) touch-screen phone…….7Figure 1-7 Flexible graphene transistors (a) (Top) Optical photograph
of an array of flexible, self-aligned GFETs on PET. (Bottom) The corresponding schematic shows a device layout. (b) Schematic cross-sectional and top views of top-gated graphene flake–based gigahertz transistors. (Left) AFM image of a graphene flake. (Right) Photograph of flexible graphene devices
fabricated on a PI substrate. (c) Cross-sectional schematic of flexible GFETs fabricated using a self-aligned process……8Figure 1-8 The magnitude of power needed for meet certain operation depending critically on the scale and applications………………………10Figure 1-9 Schematic diagrams of PSC in the (a) n-i
-p mesoscopic, (b) n-i-p planar, (c) p-i-n planar, and (d) p-i-n mesoscopic structures………...12Figure 1-10 Schematic illustration of the first TENG...………………...13Figure 1-11 Working modes of the TENG. (a) The vertical contact-separation mode. (b) The lateral sliding mode. (c) The single-electrode mode
. (d) The free-standing mode ………………………………...……14Figure 1-12 Schematic illustration of (a) device fabrication of graphene-based TENGs (b) graphene/EVA/PET-based triboelectric nanogenerators (c) device fabrication of stretchable CG based TENG with electrical output performance……………………………………………………...17
Figure 1-13 Schematic illustration and output performance of bio-waste material based TENG (a) Rice-husk (b) Tea leaves (c) Sun flower powder (SFP) (d) Wheat stalk based TENG………….…………………………18Figure 2-1 Graphene synthesis by LPCVD method……….…………...24Figure 2-2 Schematic diagram of (a) preparation pro
cess of 1L-FG/copper foil (b) Layer by layer assembly method was used for fabricating three-layer graphene over copper foil and then CF4 plasma treatment from top side to form 3L-FG/copper foil…………………….26Figure 2-3 Schematic illustration of fabrication process of F-GFET with FG as gate dielectric ……
……………………………………………….27Figure 2-4 (a) Raman spectra of PG, 1L-FG and 3L-FG after 30 min of CF4 plasma treatment over copper foil. (b) Peak intensities ratio ID/IG and optical transmittance of PG, 1L-FG and 3L-FG. Inset: image of PG and 1L-FG film over PET substrate. (c) Typical Raman spectra of PG, 1L
-FG and 3L-FG on PET substrate. (d) Optical transmittance of PG, 1L-FG and 3L-FG film over PET substrate. The inset shows the optical image of GFETs with FG as gate dielectrics on PET ……….…………30Figure 2-5 XPS analysis result of (a) PG (b) 1L-FG (c) 3L-FG where the C1s core level and several carbon f
luorine components are labeled. The inset shows the fluorine peak (F 1s) at 688.5 eV……………………….32Figure 2-6 (a) Water contact angle of PG, 1L-FG and 3L-FG over PET substrate. (b) The relationship between water contact angle of PG, 1L-FG and 3L-FG and surface-roughness………………………………………33Figure 2-7 (a) I
d vs. Vd of w/o-FG, w/1L-FG and w/3L-FG samples after 30 min of CF4 plasma (b) Id vs. Vg of w/o-FG, w/1L-FG and w/3L-FG samples at a fixed value of drain to source voltage, Vds of 0.5 V (c) Gate capacitance of w/o-FG, w/1L-FG and w/3L-FG samples (d) Gate leakage current of w/o-FG (naturally formed A
l2OX as gate dielectric), w/1L-FG and w/3L-FG samples ……………………………...…………...……...34Figure 2-8 (a) Schematic illustration of bending measurement setup at different bending radius. (i) Device measurement at (i) flat condition (ii) bending radius of 10 mm (iii) 8 mm (iv) 6 mm. Inset shows the photograph
of measurement setup. Change in (b) carrier mobility (c) ION of w/o-FG, w/1L-FG and w/3L-FG samples as a function of bending radius. The symbol ∞ represents the flat condition. Change in (d) carrier mobility (e) ION of w/o-FG, w/1L-FG and w/3L-FG samples as a function of bending cycles (Strain = 1.
56%)…………………………………….38Figure 3-1 Schematic illustration of the flexible top gate graphene field effect transistor with sandwich fluorinated graphene (FG as gate dielectric and substrate passivation layer) ……………………………...…………44Figure 3-2 Raman spectra of (a) PG/PET and PG/FG/PET substrate (b) sandwiche
d FG (FG/PG/FG/PET). Inset showing the optical transmittance of sandwiched FG. (c) HRTEM image for 1L-FG.……………….….…46Figure 3-3 (a) Id vs. Vd of FG/PG/FG device at variable vg (−2 to 2 V). (b) Id vs. Vg of FG/PG/FG. (c) Gate capacitance of FG/PG/FG ….…….48Figure 3-4 Raman spectra of devices under be
nding (a) PG/PET (Inset shows the 2D peak) (b) PG/FG/PET (inset shows the 2D peak) …….…49Figure 3-5 (a) Change in Mobility (b) change in ION of PG/PET and PG/FG/PET as a function of bending radius between bending radii of ∞ to 1.6 mm in tensile mode (c) Change in Mobility (d) Change in ION of PG/PET
and PG/FG/PET as a function of bending cycles. Inset of (c) shows the photograph of F-GFETs with sandwich FG on the PET substrate (e) change in resistance of w/1L-FG, 1L-FG/PG/1L-FG samples as a function of bending radius ………………………...……………….50Figure 3-6 Schematic evolution of proposed strain transf
er mechanism through PG/PET and PG/FG/PET. The inset of PG/PET sample shows the generation of sliding charge due to interfacial sliding between PG and PET ………………………………………………………………….….52Figure 4-1 FGr fabrication and transfer process …………….………....57Figure 4-2 (a) Raman analysis of pristine graphene a
nd the FGr samples after 5, 10, 20, and 30 min of CF4 plasma treatment over Cu foil (b) Raman intensity ratios (I2D/IG and ID/IG) of fluorinated graphene, with respect to the exposure time ……………………………………………60Figure 4-3 SEM images of (a) ITO, (b) ITO/1L-FGr, (c) ITO/2L-FGr, and (d) ITO/3L-FGr …………………
………………………………….61Figure 4-4 XPS analysis of FGr with (a) 5 min (b) 10 min and (c) 20 min of CF4 plasma treatment on the Cu foil (d) The fluorine peak (F1s) of FGr (f) The correlation of the carbon-to-fluorine fraction (C/F) with exposure time and the corresponding carrier concentrations …………….………62Fi
gure 4-5 Tauc plots and UV–Vis absorption spectra of FGr films with CF4 plasma treatment for (a) 5, (b) 10, and (c) 20 min ….………......….63Figure 4-6 WCAs on PEDOT: PSS and 1L, 2L, and 3L FGr samples ...64Figure 4-7 (a) Mechanism of large grain growth of perovskite on a non-wetting surface (b) Top-vi
ew and cross-sectional surface morphologies of perovskites on various HTLs ………………………………...…………65Figure 4-8 XRD of perovskite films on various HTL substrates ….…...66Figure 4-9 UPS spectra of various numbers of FGr layers on ITO: (a) cut-off and (b) valance band spectra …………………………………….….67Figure 4-10
Energy band diagrams of PSCs with (a) PEDOT: PSS, (b) 1L-FGr, (c) 2L-FGr, and (d) 3L-FGr as HTL …………………….…….68Figure 4-11 (a) Steady state PL spectra of PEDOT: PSS/perovskite and FGr/perovskite films. (b) TRPL spectral decay of PEDOT: PSS/perovskite and FGr/perovskite films………………………….……69Figure 4-1
2 (a) Schematic representation of a PSC having an inverted device configuration. (b) Cross-sectional HRTEM image of the ITO/ FGr–perovskite interface………………………………………...………70Figure 4-13 Photovoltaic parameters of PSCs incorporating various HTL substrates: (a) PCE (%), (b) Voc (V), (c) Jsc (mA/cm2), an
d (d) FF (%)....71Figure 4-14 Normalized PCEs of target and control PSCs incorporating various HTL substrates, measured in a N2-filled glove box. (a) Thermal stability at 60 °C (b) Light soaking effect under 1 Sun (c) Stability after several days …………………………………………………………….72Figure 4-15 (a) Schematic r
epresentation of the structure of a flexible PSC on a PET substrate (b) J–V curves of control and target flexible PSCs, measured under both forward and reverse biases. (c) Average PCE of flexible PSCs incorporating PEDOT: PSS and FGr HTLs……….…73Figure 4-16 (a) Normalized averaged PCEs of the flexibl
e PSCs after bending for 10 cycles at various bending radii. (b) Normalized averaged PCEs of the flexible PSCs plotted with respect to the number of bending cycles at a radius of 6 mm ………………………………………………75Figure 4-17 Photovoltaics parameters of flexible PSCs with various HTL substrates: (a) JSC (mA/c
m2), (b) Voc (V), and (c) FF (%) ……………....75Figure 4-18 XRD patterns of perovskite films on PET/ITO/FGr, recorded before and after bending 500 times …………………………………….76Figure 4-19 SEM images of (a) perovskite films/FGr/ITO/PET before bending (b) after bending 500 times (c) perovskite films/PEDOT: PSS/
ITO/PET before bending (d) after bending 500 times ……………….…77Figure 4-20 PL spectra of perovskite films on PET/ITO/FGr, recorded before and after various bending cycles …………………………….…78Figure 5-1 Schematic illustration showing the fabrication process of a flexible Gr-TENG with Al2O3 as the CTL ……………
………………...83Figure 5-2 The Raman spectra of (a) graphene/Al-foil/PET and (b) graphene/Al2O3/Al-foil/PET. The I2D/IG of graphene layers (1L, 3L and 5L) over (c) Al-foil/PET substrate (d) Al2O3/Al-foil/PET substrate …...85Figure 5-3 XRD patterns of (a) graphene/Al-foil/PET and (b) graphene/Al2O3/Al-foi
l/PET ……………………………………………86Figure 5-4 FESEM image of the graphene surface on (a) Al-foil/PET and (b) Al2O3/Al-foil/PET. EDS analysis of (c) graphene/Al-foil/PET and (d) graphene/Al2O3/Al-foil/PET (e) EDS elemental mapping of the graphene/Al2O3/Al-foil/PET presenting C K series, O K series and Al K ser
ies …………………………………………………………….………87Figure 5-5 3D AFM images of (a) 1L-Gr (b) 3L-Gr (c) 5L-Gr on Al foil (d) 1L-Gr (e) 3L-Gr (f) 5L-Gr on Al2O3/Al foil………………….….….89Figure 5-6 Work function of graphene layers on the (a) Al-foil (b) Al2O3/Al-foil substrate by KPFM. Inset showing the surface potential of
graphene layers (1L, 3L and 5L) over Al-foil and Al2O3 substrate (c) energy band diagrams for 1L-Gr, 3L-Gr and 5L-Gr over Al2O3 ……....90Figure 5-7 Schematic illustration of Electronic energy levels of graphene samples and AFM tip without and with electrical contact for three cases: (i) tip and the
1L-Gr (ii) tip and the 3L-Gr and (iii) tip and the 5L-Gr over Al2O3/Al foil/PET……………………………………….…...…………91Figure 5-8 Working mechanism of Gr-TENG with Al2O3 ….….…...…93Figure 5-9 a) ISC and (b) VOC of 1L-, 3L- and 5L-Gr-TENGs without Al2O3 CTL (c) Sheet resistance of graphene as a function of number
of layers ………………………………...…...…………………………….95Figure 5-10 Electrical output of the Gr-TENG with Al2O3 CTL: (a) ISC and (b) VOC of 1L-, 3L- and 5L-Gr. Magnification of the (c) ISC and (d) VOC of the 3L-Gr-TENG with Al2O3 as the CTL. Average mean (e) ISC and (f) VOC generated by pristine Gr-TENGs (1L, 3L
and 5L) and Gr-TENGs (1L, 3L and 5L) with Al2O3 CTL. Error bars indicate standard deviations for 4 sets of data points ……………...…………….….…......96Figure 5-11 (a) CV of Al/Al2O3/3L-Gr/Al at 100 kHz and 1 MHz (b) CV hysteresis of 3L-Gr-TENG with Al2O3 as CTL with different sweeping voltages (c) Surface
charge density of graphene (1L, 3L and 5L)-based TENG with and without Al2O3 as CTL ………………………………...98Figure 5-12 Circuit diagram of output (a) VOC and (b) ISC measurement of 3L-Gr TENG with Al2O3 CTL as a function of different resistors as external loads. Variation in VOC and ISC w.r.t different re
sistors as external loads of (c) 3L-Gr TENG with Al2O3 CTL (d) 3L-Gr TENG without Al2O3 CTL. Relationship between electrical output power and external loading resistance (e) 3L-Gr TENG with Al2O3 CTL (f) 3L-Gr TENG without Al2O3 CTL…………………………………….………………...99Figure 5-13 (a)Electrical stability and du
rability of the 3L-Gr TENG with Al2O3 (b) Schematic illustrations showing the charge-trapping mechanism of 3L-Gr-TENG without and with Al2O3 charge trapping layer ………101Figure 5-14 (a) Photograph showing 20 LEDs being powered (b) Circuit diagram of bridge rectifier (c) Charging curves of capacitors
with various capacitances (d) Photograph of powering a timer …….………………102Figure 6-1 The schematic diagram of the fabrication process for SCG powder based TENG ……………………………………………….….108Figure 6-2 The schematic diagram of the fabrication process for SCG thin-film based TENG via thermal evaporation meth
od ………………109Figure 6-3 FESEM image of (a) SCG powder (inset image illustrates the high magnification of SCG powder) (b) SCG thin-film/Al foil/PET (inset image illustrates the high magnification of SCG thin-film). EDS of the (c) SCG powder (d) SCG thin-film/Al foil/PET…………………………. 112Figure 6-4 Raman
spectra analysis (a) pristine SCG powder (b) SCG thin-film/Al foil/PET. XRD patterns of (c) SCG powder (d) SCG thin film with different thickness ……………………………………… ……….115Figure 6-5 FTIR analysis of the (a) pristine SCG powder sample (b) SCG thin film………………………………………………………………...116Figure 6-6 3D AFM ima
ge of SCG thin-film with various thickness (a) 50 nm (b)100 nm and (c) 200 nm……………………………………...117Figure 6-7 Schematic illustration of working principle of SCG thin-film based TENG …………………………………………………………...119Figure 6-8 Finite element simulation of the generated voltage difference for SCG thin-film b
ased TENG based on the contact and separation between SCG thin film and PTFE …………….……………………….120Figure 6-9 (a) The setup for electrical property testing, which including a Keithley 6514 system electrometer and linear motor. Electrical output (b) ISC (c) VOC of TENGs based on different friction pairs
for checking the triboelectric polarity of SCG…………………………………………...123Figure 6-10 Electrical measurement of (a) ISC and (b) VOC of the SCG thin-film based TENG. Mean value of (d) ISC (e) VOC and (f) Output power density of the pristine SCG powder and thermal deposited SCG thin-film based TENG. ...………
………………………………………125Figure 6-11 (a) Schematic illustration of KPFM for measuring the work function. (b) Surface potential images of SCG thin film with various thickness (50 nm, 100 nm and 200 nm). (c) Surface potential and (d) Work function vs SCG thin film with various thickness (50 nm, 100 nm and 20
0 nm).………….……………………………………………….128Figure 6-12 (a) Isc and (b) Voc of SCG thin film based TENG under different contact frequencies (c) Isc and (d) Voc of SCG thin film based TENG under different separation distance…………………………….129Figure 6-13 Electrical response (a) ISC (b) VOC of pristine SCG powder an
d (c) ISC (d) VOC of SCG thin-film based TENG with respect to different relative humidity (35-85% RH) …………………………….131Figure 6-14 Electrical stability and durability test of the output performance of (a) pristine SCG powder based TENG (b) SCG thin-film based TENG……………………………………………………………132Figure 6-15
Applications of the SCG thin film based TENG as a power supply: (a) Circuit diagram of the bridge-rectifier for charging a capacitor (b) Charging curves of capacitors with various capacitances (0.1, 2.2 and 3.3 µF) (c) Photograph of powering a timer…………………...………133Figure 7-1 Schematic illustration o
f FG based TENG…….….……….139Figure 7-2 Working mechanism of FG based TENG…………………140Figure 7-3 Electrical output of FG-TENG: (a) Isc and (b) Voc …….….141Table captionsTable 2-1 Comparison of flexible G-FETs on/off ratio of our work with other’s work…………………………………………………...………...40Table 3-1 Summary of th
e electrical and mechanical performance of flexible w/o-FG, w/ 1L-FG, w/3L-FG and sandwich FG (FG/PG/FG) samples......................................................................................................52Table 3.2: Comparison of the electrical and mechanical performance of sandwich FG ba
sed F-GFET with previous F-GFET with different gate dielectrics……………………………………………………….………53Table 4-1 Best photovoltaic performance from control and target devices prepared on rigid and flexible substrates……………………………......74Table 5-1 EDS elemental analysis of graphene over Al-foil/PET and Al2O3/Al-foi
l/PET ………………………………………………………88Table 5-2 Comparison of electrical output performance of Gr-TENGs with and without Al2O3 CTL samples used in this study………………103Table 6-1 EDS elemental analysis of SCG-Powder and SCG thin film /Al foil/PET………………………………………………………………...113Table 6-2 Comparison of electrical o
utput performance of SCG-TENGs samples used in this study……………………………………………...126
想知道XPS C1s更多一定要看下面主題
XPS C1s的網路口碑排行榜
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#1.如何分析XPS數據
分析XPS: 以C1s 為例,將C1s 的數據放進origin 程式中,做出曲線圖,並通過數據擬合與文獻參考,將C1s 各. 鍵結的Binding energy 位置與峰值(如C-C、C=O、C-N ... 於 www.hic.ch.ntu.edu.tw -
#2.Carbon - HarwellXPS Guru
Carbon analysis by XPS is typically recorded for every experiment, ... Analysis is performed on the C 1s region, which may overlap with K 2p ... 於 www.harwellxps.guru -
#4.XPS de nanoestructuras de carbono obtenidas por descarga ...
XPS of carbon nanostructures obtained by underwater arc discharge of ... Figure 2 High resolution XPS spectrum of the C1s zone from the samples of the ... 於 scielo.sld.cu -
#5.XPS图谱分析之-C1s图谱分析(石墨碳、有机碳、碳化物等)
免费的材料分析科普课来啦, XPS 图谱分析之- C1s 图谱分析(石墨碳、有机碳、碳化物等),欢迎对材料检测分析技术、失效分析感兴趣的小伙伴和有材料产品测试需求的朋友在 ... 於 www.bilibili.com -
#6.C 1s - Carbonates
X-ray photoelectron spectroscopy (XPS or ESCA) curve fitting procedures, reference materials and useful notes are listed here to provide a starting point for ... 於 www.xpsfitting.com -
#7.XPSによるPETの化学結合状態評価 - 分析事例
カネカテクノリサーチの分析事例:XPSによるPETの化学結合状態評価をご紹介。 ... 測定によって取得されたC1s、O1sスペクトルをピーク分割すると、C1sスペクトルは3 ... 於 www.ktr.co.jp -
#8.A Modified Small Intestinal Submucosa Patch with ...
X-ray photoelectron spectroscopy (XPS) was carried out to analyze the ... As shown by the C 1s core-level spectrum of the SIS, the binding ... 於 onlinelibrary.wiley.com -
#9.4.9: X-ray Photoelectron Spectroscopy - Chemistry LibreTexts
The XPS of nanodiamond should show a single C1s peak, with a binding energy characteristic of sp 3 carbon (around 286 eV). The ratio of the sp 2 ... 於 chem.libretexts.org -
#10.Functionalization of Graphene: Covalent and Non-Covalent ...
graphene and the solution, and (right) N1s and C1s XPS spectra of GNRs before and after the functionalization (f-GNRs). Reprinted with permission. 於 chenv.sit.edu.cn -
#11.Zinc Oxide Nanostructures: Synthesis and Characterization
These XPS C1s lines confirm the existence of undesired C contaminations appearing at the surface of our nanostructured ZnO thin films after their exposition ... 於 books.google.com.tw -
#12.데어 랑그릿사 다운 2023 - komakere.online
Xps c1s 補正버려지다 영어로 마케팅 업무 하는일 백종원 의 골목 식당 79 회의록.Youtube 動画 rouki sasaki진주시육아종합지원센터 Shp 파일 변환 미사키 아야메 ... 於 komakere.online -
#13.A review on C1s XPS-spectra for some kinds of carbon materials
As a surface analysis technique, X-ray photoelectron spectroscopy (XPS) has been extremely useful to analyze surface chemical states of C1s XPS- ... 於 www.tandfonline.com -
#14.X-Ray Photoelectron Spectrum - an overview - ScienceDirect
The C1s XPS spectrum of GNO in Fig. 11.5(b) shows significantly stronger signals than that of GNs, indicating effective oxidation of GNs after the chemical ... 於 www.sciencedirect.com -
#15.Origins of sp3C peaks in C1s X-ray Photoelectron Spectra of ...
X-ray photoelectron spectroscopy (XPS) is among the most powerful techniques to analyze defective structures of carbon materials such as ... 於 pubs.acs.org -
#16.Polymer Surface Modification: Relevance to Adhesion, Volume 5
XPS spectra were recorded at take-off angles of 20 and 45◦ against the sample surface. The O/C and N/C atom ratios were calculated from the C1s, ... 於 books.google.com.tw -
#17.X-Ray Photoelectron Spectroscopy (XPS) Applied to Soot ...
Oil Fired Boiler versus Residential Oil Fired Furnace. % Area. 50. 40. 30. 20. 10. 0. C1s Peak Histogram. 80. C1s Peak Histogram. C-C sp2. 於 www.energy.gov -
#18.Polymer Functionalized Graphene - 第 113 頁 - Google 圖書結果
The percentage of nitrogen calculated from XPS is ~3.19 wt% in the grafted sample, yielding the PDMAEMA percentage, ~35 wt%. The C1s spectrum of GO exhibits ... 於 books.google.com.tw -
#19.XPS中C1s分峰校准- 分析 - 小木虫
请教各位,下面是我送样检测的XPS的C1s谱图,仪器的标准结合能为284.6eV,这个图中284、283、282.45eV处有几个小峰,但是样品中所有可能存在的元素都没有对应的,那 ... 於 muchong.com -
#20.Calibration of Binding Energy Positions ... - Semantic Scholar
The adventitious carbon located at 284.8 eV was used to calibrate samples without the carbon themselves. When the carbon is as a major part ... 於 www.semanticscholar.org -
#21.High resolution XPS spectra of the carbon region (C1s) for ...
The XPS C1s peaks at 284.0 eV, 286.1 eV and 295.5 eV are associated with sp 2 and sp 3 -hybridized carbon (C C and C C), hydroxyl/phenols (C OH) and carboxyl ( ... 於 www.researchgate.net -
#22.カテゴリ⒛ Mac MacBook Air Core i5 128GBの通販 by たん ...
... 通販 - PayPayモール 100W トーヨー タイヤ プロクセスC1S RMP-720F hタイヤ ... ブランド DELL - DELL XPS 13 9360 i5-7200Uの通販 by rakurakuma58's shop| ... 於 detakkaltim.com -
#23.Voge 350 AC: Το πρώτο μοντέλο με τον νέο δικύλινδρο ...
Επιλέξτε, C1S, C-MATE, E8, E8S, G5, G5S, KS, M6, M6L, T, U3, Y, Y1S ... VOX 110, XP6 T (Enduro), XPS ST (Street Supermotard), XPS T (Enduro). 於 www.mototriti.gr -
#24.表面分析―XPS : X 線光電子分光― - J-Stage
4-(b)は PET の O1s,C1s スペクトルである.ケミカ. ルシフトがわかるように測定するには,定性測定とは逆に感度. よりもパスエネルギーを小さくするなど ... 於 www.jstage.jst.go.jp -
#25.Interpreting of XPS C1s Binding Energies in Silicon ...
A method for predicting XPS C1s binding energies in polymers has been developed previously [1]. The calculation uses partial atomic charges determined ... 於 www.scientific.net -
#26.Calibration of Binding Energy Positions with ... - Springer Link
with C1s for XPS Results. FANG De1,2, HE Feng1,3, XIE Junlin1,2,3*, XUE Lihui2. (1. State Key Laboratory of Silicate Materials for Architectures, ... 於 link.springer.com -
#27.Simulation of XPS C1s Spectra of Organic Monolayers by ...
As a result, the simulated C1s XPS spectra can elucidate the binding energies of the different carbon species within an organic layer and, in this way, greatly ... 於 agris.fao.org -
#28.How to Analyze XPS Data: A Beginner's Guide
Learn how to analyze XPS data in our beginner's guide to XPS. ... The survey scan shows the presence of chromium (C1s) in the hazed area, ... 於 www.innovatechlabs.com -
#29.Simulation of C1s Spectra of C- and O-Containing Polymers in ...
... (XPS) were simulated from Koopmans' theorem by ab initio MO calculations of HONDO7 program using the model oligomers. The calculated C1s spectra were ... 於 www.nature.com -
#30.Metal-free Functionalized Carbons in Catalysis: Synthesis, ...
The FWhM of the peak directly affects the deconvolution of the C1s peak and, ... C 1s spectra are available, preferentially recorded with the same XpS ... 於 books.google.com.tw -
#31.Nanoscience and Nanoengineering: Novel Applications
... 226–232 XPS C1s-spectrum of, 227 Polymer nanocomposites advances, 341–2 dental applications for, 333 Polymethyl methacrylate (PMMA), 333 C1s-spectra of, ... 於 books.google.com.tw -
#32.XPS Charge Correction Using Carbon 1s - YouTube
Using the carbon 1s peak to charge correct X-ray photoelectron ( XPS ) spectra in CasaXPS. 於 www.youtube.com -
#33.Relation between C1s XPS binding energy and calculated ...
A correlation has been developed for corrected experimental C1s XPS binding energies of polymers vs. calculated partial charges of carbon atom in model ... 於 www.academia.edu -
#34.Advances in Catalysis - 第 186 頁 - Google 圖書結果
core-level XPS is the apparent method of choice. XPS allows one to distinguish molecular CO (C1s BE of approximately 286 eV) from amorphous/graphitic carbon ... 於 books.google.com.tw -
#35.カバー HiKOKI(ハイコーキ/旧日立工機) C3605DYB(XPS ...
島道具 PayPayモール店 HiKOKI(ハイコーキ/旧日立工機) C3605DYB(XPS) 125mm ... ガルシア ディグレ トーヨー プロクセス PROXES C1S (数量限定) 225/45R17 カーポート ... 於 www.yatecuento.com.ar -
#36.XPS: Mapping | Covalent Metrology Analytical Labs
High resolution C1s spectrum showing Carbon-Oxygen and Fluorocarbon bonding states. X-ray photoelectron spectroscopy (XPS) is a highly surface-specific chemical ... 於 covalentmetrology.com -
#37.XPS C1s spectra of Graphite and Graphene oxide
XPS spectra were obtained in a Kratos Axis Ultra DLD irradiating the samples with an Al monochromatic Kα radiation of energy (1486.6 eV) at ... 於 data.mendeley.com -
#38.XPS analysis - MDPI
Figure S1. XPS analysis of C1s spectrum of v-CNTs after 1 minute of ion implantation with 1 keV of ion kinetic energy. Figure S2. 於 mdpi-res.com -
#39.Cleaning and Surface Conditioning Technology in ...
The C1s XPS spectra recorded for areas (A) and (B) are very similar, in each case with a single broad peak centered at around 285 eV, for which the ... 於 books.google.com.tw -
#40.Advanced Surface Engineering Research - 第 155 頁 - Google 圖書結果
... CEE transitions in the unit cell hex C24 as cells compared C24 to energy losses above the core-level energy (284.6 eV) in the XPS C1s spectrum of HOPG. 於 books.google.com.tw -
#41.Electronic Properties of Carbon Nanotubes - 第 58 頁 - Google 圖書結果
XPS is an effective surface sensitive method for quantifying the extent (or ... (Left-hand panel) XPS stackplot of C1s core level of the carbon nanotubes at ... 於 books.google.com.tw -
#42.XPS provides chemical bond information - EAG Laboratories
XPS (X-ray Photoelectron Spectroscopy) is also sometimes called ESCA (Electron Spectroscopy for Chemical Analysis). · Carbon chemical state (C1s binding energy ... 於 www.eag.com -
#43.Carbon | XPS Periodic Table | Thermo Fisher Scientific - TW
Primary XPS region: C1s Overlapping regions: Ru3d, Sr3p1/2, K2p. Contents of carbon section: Adventitious Carbon Contamination; Polymers; Graphite, ... 於 www.thermofisher.com -
#44.Heterogeneous Materials and C 1s Peak Models In CasaXPS
A set of measurements from different samples containing similar compounds is used to construct a peak model for C 1s high resolution spectra ... 於 www.youtube.com -
#45.XPS数据后处理 - 知乎专栏
XPSpeak软件分析1.通过Excel中数据binding energy 、intensity 导入origin进行数据电荷校正以C1s为基准进行校正,XPS标准C1s为284.8eV结合能, ... 於 zhuanlan.zhihu.com -
#46.布线基板以及多层布线基板的制作方法 - X技术
... 射线光电子分光法(xps)的分析来测定。更具体地,对于第2绝缘层,通过x射线光电子分光法测定聚酰亚胺树脂,将c1s光谱波形分离为酰胺键中的碳的峰、 ... 於 www.xjishu.com -
#47.Electronic Supplementary Information
S3 High-resolution XPS C1s and Si 2p spectra of coated fabrics. 284 286 288 290 292 294. Binding energy (eV). PEDOT. PEDOT/FD-POSS/FAS. PEDOT/FAS. 於 www.rsc.org -
#48.Practical guides for x-ray photoelectron spectroscopy (XPS)
This is particu- larly important in analyzing XPS data, specifically C 1s spectra: typical chemical shifts of C 1s signals are of the order of a few eV and ... 於 mmrc.caltech.edu