Synthesize的問題，透過圖書和論文來找解法和答案更準確安心。 我們找到下列包括價格和評價等資訊懶人包

Cardiovascular Complications of Chronic Rheumatic Diseases, an Issue of Rheumatic Disease Clinics of North America: Volume 49-1

為了解決Synthesize的問題，作者 這樣論述：

In this issue of Rheumatic Disease Clinics, guest editors Drs. M. Elaine Husni and George A. Karpouzas bring their considerable expertise to the topic of Cardiovascular Complications of Chronic Rheumatic Diseases. Top experts in the field cover key topics such as primary and secondary atheroscler

otic cardiovascular (ASCVD) risk prevention in the rheumatic disease, pro-thrombotic and pro-atherogenic anti-phospholipid antibodies, recommendations for the use of NSAIDs and CVD risk, and more.Contains 9 relevant, practice-oriented topics including atherosclerotic cardiovascular risk stratificati

on in the rheumatic diseases; subclinical atherosclerosis evaluation across various vascular territories; lessons from heart and large vessel biopsies in patients with and without autoimmune rheumatic disease; the role of lipoprotein levels and function in atherosclerosis associated with autoimmune

rheumatic diseases; and more. Provides in-depth clinical reviews on cardiovascular complications of chronic rheumatic diseases, offering actionable insights for clinical practice. Presents the latest information on this timely, focused topic under the leadership of experienced editors in the field.

Authors synthesize and distill the latest research and practice guidelines to create clinically significant, topic-based reviews.

Synthesize進入發燒排行的影片

針對客製化 SAR ADC 之二進位電容陣列佈局自動化

為了解決Synthesize的問題，作者姜承佑 這樣論述：

由於其出色的功率效率，逐次逼近寄存器 (SAR) 模數轉換器 (ADC) 是實現低功耗 ADC 設計的一個具吸引力的選擇。在類比佈局設計中，導線、元件間引起的寄生效 應會影響器件的準確度與性能。為了大幅減少電路中的寄生電容，一種一維陣列式橫 向金屬-金屬極小電容單元組成的電容陣列架構已經採用於一些低功耗或高速的 SAR ADC 中。雖然採用這種二進位電容陣列架構的 SAR ADC 可以大大降低功耗與面積， 但由於每個單元電容器的電容值非常小，電路中非預期的寄生電容會顯著影響電容器 的匹配特性和設置時間。本文提出了一個用於合成客製化 SAR ADC 之最佳化二進位 電容陣列的方法。實驗結果也表

明，我們的方法生成的佈局結果之 ENOB 與手動設計 和其他自動化研究相比優化不少。

Handbook of Chemical and Biological Warfare Agents: Military Chemical and Toxic Industrial Agents

為了解決Synthesize的問題，作者Ellison, D. Hank 這樣論述：

D. Hank Ellison served in the United States Army as a chemical officer and has worked for the U.S. Environmental Protection Agency as both a remedial project manager and federal on-scene coordinator under the Superfund Program. He currently is president of Cerberus & Associates, Inc., a consulting f

irm that specializes in response to technological disasters. As a private consultant, Ellison has responded to hazardous material incidents involving highly poisonous materials, chemical fires, water reactive substances, and shock-sensitive materials throughout the state of Michigan. He has provided

chemical and biological counterterrorism training to members of emergency medical service (EMS) units, hazardous materials (hazmat) teams, police special weapons and tactics (SWAT) teams, and explosive ordinance disposal (EOD) teams. During the anthrax events of 2001, he helped state and local gove

rnments as well as Fortune 500 companies to develop and implement response plans for biological threats. He currently advises clients on issues of hazardous materials, and related safety and security concerns.He also served as a safety officer and then the training officer for the United States Depa

rtment of Health and Human Services DMORT-WMD emergency response team, which has the primary mission for recovery and decontamination of fatalities contaminated with radiological, biological or chemical materials. He deployed with the team to New Orleans in response to Hurricane Katrina in 2005.Mr.

Ellison holds an MS degree in chemistry from the University of California, Irvine. His graduate research involved methods to synthesize poisons extracted from Colombian poison-dart frogs. He holds a BS in chemistry from the Georgia Institute of Technology. In addition to his works on weapons of mass

destruction, he is the author of Chemical Warfare During the Vietnam War: Riot Control Agents in Combat, published in 2011, as well as a chapter on the hazardous properties of materials in Managing Hazardous Materials: A Definitive Text published in 2002.

二維材料於邏輯元件與記憶體內運算應用

為了解決Synthesize的問題，作者鍾昀晏 這樣論述：

半導體產業在過去半個世紀不斷地發展，塊材材料逐漸面臨電晶體微縮的物理極限，因此我們開始尋找替代方案。由於二維材料天生的原子級材料厚度與其可抑制短通道效應能力，被視為半導體產業極具未來發展性材料。此篇論文為研究二維材料二硫化鉬的N型通道元件之製作技術與其材料的特性與應用。首先，我們使用二階段硫化製程所製備的二硫化鉬沉積高介電材料並使用X-射線能譜儀（XPS）與光致發光譜（PL）進行分析，量測二硫化鉬與四種高介電材料的能帶對準，參考以往製程經驗，可結論二氧化鉿是有潛力介電層材料在二硫化鉬上，並作為我們後續元件的主要閘極介電層。接著使用二階段硫化法製作鈮（Nb）摻雜的二硫化鉬，Ｐ型的鈮摻雜可提升載

子摻雜濃度用以降低金半介面的接觸電阻，透過不同製程方式製作頂部接觸和邊緣接觸的兩種金半介面結構，傳輸線模型(TLM)分析顯示出，邊緣接觸結構比頂部接觸結構的接觸電阻率低了兩個數量級以上，並藉由數值疊代方式得知層間電阻率是導致頂部接觸結構有較高接觸電阻率主因，並指出邊緣接觸之金半介面在二維材料元件的潛在優勢。在電晶體研究上，我們使用化學氣相沉積（CVD）合成的二硫化鉬成功製作出單層Ｎ型通道元件，將此電晶體與記憶體元件相結合，用雙閘極結構將讀（read）與寫（write）分成上下兩個獨立控制的閘極，並輸入適當脈衝訊號以改變儲存在電荷儲存層的載子量，藉由本體效應（Body effect）獲得足夠大的

記憶區間（Memory window），可擁有高導電度比（GMAX/GMIN = 50）與低非線性度（Non-linearity= -0.8/-0.3）和非對稱性（Asymmetry = 0.5），展示出了二維材料在類神經突觸元件記憶體內運算應用上的可能性。除了與記憶體元件結合外，我們亦展示二維材料電晶體作為邏輯閘的應用，將需要至少兩個傳統矽基元件才可表現的邏輯閘特性，可於單一二維材料電晶體上展現出來，並在兩種邏輯閘（NAND/NOR）特性作切換，二維材料的可折疊特性亦具有潛力於電晶體密度提升。我們進一步使用電子束微影系統製作奈米等級短通道元件，首先使用金屬輔助化學氣相沉積 (Metal-as

sisted CVD)方式合成出高品質的二維材料二硫化鎢 (WS2)，並成功製作次臨界擺幅（Subthreshold Swing, S.S.）約為97 mV/dec.且高達106的電流開關比（ION/IOFF ratio）的40奈米通道長度二硫化鎢Ｐ型通道電晶體，其電特性與文獻上的二硫化鉬N型通道電晶體可說是相當，可作為互補式場效電晶體。另一方面，深入了解二維材料其材料特性後，可知在厚度縮薄仍可保持極高的機械強度，有潛力作為奈米片電晶體的通道材料。故於論文最後我們針對如何透過對元件製作優化提供了些許建議。